Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Titanium DC-magnetron sputtering (high power)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 0.2 µm
0.01 .. 0.2 µm
Ambient
Ambient to which substrate is exposed during processing
 argon
Batch size 1
Deposition rate
Rate at which material is added to a wafer
 0.0564 µm/min
Excluded materials gold (category), copper
Material titanium
Pressure
Pressure of process chamber during processing
 5 mTorr
Sides processed either
Temperature 27 °C
Wafer size
Wafer size
Equipment High Res 100
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide, alumina, Borofloat (Schott)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Comments:
  • This process uses a cathode power of 750W. An RF preclean can be performed prior to deposition
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.