|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
|---|
| Batch size |
25 |
|---|
| Film grown Material grown during a process |
silicon dioxide |
|---|
| Growth rate Rate at which film grows (linear approximation) |
0.03 nm/min |
|---|
| Material |
phosphoryl chloride |
|---|
| Process duration |
3 hour |
|---|
| Sides processed |
both |
|---|
| Temperature |
950 °C |
|---|
| Thermal duration |
45 min |
|---|
| Wafer size |
|
|---|
| Equipment |
Tylan Furnace (Phosphorus diffusion, Tube #6) |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
quartz tube |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
