|
| Ambient Ambient to which substrate is exposed during processing |
oxygen |
|---|
| Batch size |
25 |
|---|
| Etch rate |
1 µm/min |
|---|
| Etchant Solutions and their concentrations. |
oxygen |
|---|
| Material |
photoresist (category) |
|---|
| Pressure Pressure of process chamber during processing |
1250 mTorr |
|---|
| Process duration |
100 min |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
90 .. 190 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Matrix Plasma Resist Stripper |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
pins |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator, quartz (single crystal) |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
|---|
| Comments: |
|
