Photoresist develop (Shipley 1827) |
|
Batch size |
1 |
Developer Agent that reacts with masking layer (e.g., photoresist) to etch it selectively. |
MF-319 |
Material |
Shipley 1827 |
Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
Shipley 1827: 1 |
Sides processed |
both |
Temperature |
25 °C |
Wafer size |
|
Equipment |
Wet bench |
Equipment characteristics: |
Piece dimension Range of wafer piece dimensions the equipment can accept |
10 .. 75 mm |
Piece geometry Geometry of wafer pieces the equipment can accept |
rectangular, circular, triangular shard, irregular, other |
Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 2000 µm |
Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
Wafer holder Device that holds the wafers during processing. |
teflon cassette |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon |
Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |