Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  KOH etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 600 µm
0 .. 600 µm
Etch rate 10000 Å/min
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon: 1
Sides processed both
Temperature 80 °C
Wafer size
Wafer size
Equipment Sink 3
Equipment characteristics:
Batch sizes 100 mm: 5, 150 mm: 5
MOS clean no
Wafer holder
Device that holds the wafers during processing.
 teflon chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • Mask layer must be silicon nitride or thermal silicon dioxide.