Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Aluminum wet etch (Low power deposition)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.01 .. 2 µm
0.01 .. 2 µm
Batch size 3
Etch rate 0.0657 µm/min
Etchant
Solutions and their concentrations.
 J.T. Baker 80-15-3-2 (CMOS Grade)
Excluded materials gold (category), copper
Material aluminum
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 aluminum: 1, photoresist (category): 7.78
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Air Control Microvoid
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide, Borofloat (Schott), alumina
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.