Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  DC-magnetron sputtering
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Sides processed either
Equipment
Comments:
  • The substrate is placed at room temperature in a low-pressure chamber between two electrodes (the cathode and anode). A large DC potential is applied between the electrodes, which causes a plasma and ionization of the gas (e.g., argon) between the electrodes. The ions bombard the cathode (named the target) causing atoms to be knocked off the target and condense on the substrate surface. A strong magnetic field is applied to contain the plasma near the surface of the target to increase the deposition rate. The process is typically performed on one side of the substrate at a time and can only be used to deposit conductive materials.