Process Hierarchy

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  Silicon dioxide plasma etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 12
Etch rate 4000 Å/min
Etchants
Solutions and their concentrations.
 helium, methane, trifluoromethane
Excluded materials gold
Material silicon dioxide
Num dummies 3
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 2.15, silicon dioxide: 1
Setup time 60 min
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment Lam 590 Plasma Etcher
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 helium clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 2000 µm