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Chemical polishing: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
CMP
Lapping
Miscellaneous polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Chemical polishing
Process characteristics:
Materials
Specify material(s) to polish.
Materials
Available
Alloy 42
alumina
aluminum
aluminum oxide
aluminum/copper [99.5:0.5]
aluminum/silicon [98:2]
aluminum/silicon [99:1]
aluminum/silicon/copper [98:1:1]
AZO
BCB 3022-63
BCB 4024-40
BCB 4026-46
Beryllium Copper
Borofloat (Schott)
borophosphosilicate glass
brass
BSG
carbon
ceramic
chromium
chromium (transparent)
chromium/aluminum
chromium/gold
chromium/gold/chromium
Corning 1737
Durimide 115A
Durimide 7520
Foturan (Schott)
fused silica
gallium arsenide
gallium nitride
gallium phosphide
germanium
glass (Hoya)
glass (spin-on)
glass-ceramic
gold
gold (nano-porous)
gold/titanium
indium phosphide
indium tin oxide
kapton
Kovar
lead
lithium niobate
Magnesium fluoride
Magnesium oxide
molybdenum
Nichrome
nickel
NTO
other
palladium
permalloy
phosphosilicate glass
phosphosilicate glass (low temperature)
plating base metal
platinum
polysilicon
Pyrex (Corning 7740)
PZT
quartz (single crystal)
ruthenium
sapphire
SF4 Glass
Sichrome
silicon
silicon carbide
silicon dioxide
silicon dioxide (low temperature)
silicon nitride
silicon oxy-nitride
silver
soda lime
stainless steel
tantalum
tantalum nitride
tantalum oxide
titanium
titanium nitride
titanium oxide
titanium/aluminum
titanium/nickel
titanium/tungsten
tungsten
vanadium
white crown
white crown (zinc-borosilicate)
Zeonor
zinc
zinc oxide
zirconium dioxide
Selected
copper
Specify material(s) to polish.
Roughness
Required RMS roughness of the polished surface (if known).
Roughness
Å
nm
Required RMS roughness of the polished surface (if known).
unconstrained
Sides processed
Specify whether polishing is to occur on a single or both sides of substrate.
Sides processed
both
either
Specify whether polishing is to occur on a single or both sides of substrate.
Thickness removed
Thickness of material to be removed.
Thickness removed
Å
µm
nm
Thickness of material to be removed.
unconstrained
Equipment
Comments:
The substrate is placed in a chemical solution, which etches the surface to reduce the surface roughness.