Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Buffered HF etch
Process characteristics:
Depth
Depth to be etched in material.
Depth
Depth to be etched in material., must be 0 .. 5 µm
0 .. 5 µm
Batch size 6
Etchant
Solutions and their concentrations.
 HF (buffered)
Material silicon dioxide
Temperature 23 °C
Wafer size
Wafer size
Equipment Wetbench
  • bkla
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
 0 .. 4 inch
Piece geometry
Geometry of wafer pieces the equipment can accept
 triangular shard, other, rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
 100 .. 1000 µm
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
 teflon carrier
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm