Anodic bonding (with alignment) |
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| Process characteristics: |
| Alignment type Method used to align materials to be bonded. |
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| Contact force Specify contact force applied to substrates during bonding. |
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| Temperature Temperature of the substrates during bonding. |
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| Voltage Voltage applied across wafers during bonding. |
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| Alignment tolerance Registration of CAD data to features on wafer |
1 µm |
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| Batch size |
2 |
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| Bonded materials Pair of materials bonded by this process |
Pyrex (Corning 7740), silicon |
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| Pressure Pressure of process chamber during processing |
100 mTorr |
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| Wafer size |
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| Equipment |
EVG 501
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| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
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| Wafer holder Device that holds the wafers during processing. |
metal chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, Pyrex (Corning 7740) |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 1000 µm |
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| Comments: |
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