4:1 Sulfuric/peroxide bath |
|
| Batch size |
25 |
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| Material concentrations |
sulfuric acid/hydrogen peroxide [4:1] |
|---|
| Process duration |
20 min |
|---|
| Sides processed |
both |
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| Temperature |
120 °C |
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| Wafer size |
|
|---|
| Equipment |
Nonmetal wet bench |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 550 µm |
|---|
