on front Down Stream Plasma Descum |
|
| Process characteristics: |
| Material |
|
|---|
| Depth |
0 .. 10 µm |
|---|
| Etch type |
dry isotropic |
|---|
| Gas |
Oxygen, H2N2, CF4 |
|---|
| Sides processed |
either |
|---|
| Temperature |
110 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Axcelis Down Stream Plasma Asher / Stripper |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25 |
|---|
| Wafer holder Device that holds the wafers during processing. |
cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, sapphire, quartz (fused silica), silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
250 .. 800 µm |
|---|
