|
| Batch size |
1 |
|---|
| Etch rate |
11.5 µm/min |
|---|
| Etchant Solutions and their concentrations. |
HF/nitric acid |
|---|
| Material |
silicon |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
silicon: 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Wet bench |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
teflon chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1200 µm |
|---|
