on front Aluminum plasma etch |
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| Process characteristics: |
| Depth Depth of material removed by etch process |
|
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| Ambient Ambient to which substrate is exposed during processing |
boron trichloride, chlorine, nitrogen, sulfur hexafluoride |
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| Batch size |
4 |
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| Etch rate |
0.6 µm/min |
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| Loading effects Free form text field for description of loading effects (e.g. bullseye) |
Highly sensitive |
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| Material |
aluminum |
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| Min feature size |
1 µm |
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| Pressure Pressure of process chamber during processing |
200 mTorr |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
aluminum: 1, photoresist (category): 1.5, silicon dioxide: 6 |
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| Sides processed |
either |
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| Temperature |
80 °C |
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| Wafer size |
|
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| Equipment |
Applied Materials Precision 5000 (chamber A) |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
mechanical clamp |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, quartz (single crystal), silicon on insulator, silicon germanium |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
400 .. 750 µm |
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| Comments: |
|
