|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
| Material |
Parylene C |
| Pressure Pressure of process chamber during processing |
0.1 Torr |
| Sides processed |
both |
| Temperature |
24 °C |
| Wafer size |
|
| Equipment |
Parylene deposition system |
| Equipment characteristics: |
| Batch sizes |
100 mm: 4, 50 mm: 6, 75 mm: 5 |
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
| Wafer holder Device that holds the wafers during processing. |
flat chuck |
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, alumina, glass (category), metal (category), silicon on insulator, Pyrex (Corning 7740), quartz (single crystal), sapphire |
| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 10000 µm |
| Comments: |
|