on front Silicon ICP Etch |
|
| Process characteristics: |
| Depth |
|
|---|
| Batch size |
1 |
|---|
| Etch rate |
1.1 µm/min |
|---|
| Gas |
SF6, Ar |
|---|
| Material |
silicon |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
VLR 700 Cluster - Fluorine Dielectric Etch Chamber |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
cassette |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), sapphire, silicon, silicon on insulator |
|---|
