on front Silicon Dioxide PECVD PlasmaTherm 790+ |
|
| Process characteristics: |
| Thickness |
|
|---|
| Deposition rate Rate at which material is added to a wafer |
33 nm/min |
|---|
| Gas |
5%Silane, Nitrous Oxide, Helium |
|---|
| Material |
silicon dioxide |
|---|
| Microstructure |
amorphous |
|---|
| Refractive index |
1.45 |
|---|
| Sides processed |
either |
|---|
| Temperature |
250 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Plasma Therm 790+ Nitride / Oxide PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 9, 150 mm: 4, 200 mm: 1, 50 mm: 9, 75 mm: 9 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
aluminum plate |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, indium phosphide, silicon, silicon carbide |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |
|---|
