on front G-line develop (OCG 825 35CS) |
|
| Developer Agent that reacts with masking layer (e.g., photoresist) to etch it selectively. |
OCG 934 |
|---|
| Etch rate |
1 µm/min |
|---|
| Material |
OCG 825 35CS |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
OCG 825 35CS: 1 |
|---|
| Setup time |
30 min |
|---|
| Sides processed |
either |
|---|
| Temperature |
23 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
SVG-8132CTD Develop Track |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
vacuum chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
