Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Multipoly process: Recipe #2
Batch size 50
Excluded materials gold (category), copper
Material polysilicon
Microstructure polycrystalline
Radius of curvature of released structures 6 mm
Residual stress 29 MPa
Sides processed both
Stress gradient 1.5 MPa/µm
Temperature 615 °C
Thickness 3.12 µm
Wafer size
Wafer size
Equipment MRL furnace 321-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • This zero-stress multipoly recipe involves 8 sequential depositions with following thickness values (starting at substrate) 0.31, 0.52, 0.24, 0.52, 0.22, 0.52, 0.31, 0.48 (all in µm).
  • Odd numbered layers were deposited at 615 C and even numbered layers deposited at 570 C.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.