Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  TMAH silicon etch
Process characteristics:
Depth
Depth to etch in material.
Depth
Depth to etch in material., must be 0 .. 600 µm
0 .. 600 µm
Etch rate
Etch rate
Etchant
Specify wet etchant (if known).
Etchant
Specify wet etchant (if known).
Temperature
Temperature
Batch size 12
Mask materials
Materials that can be used to mask etching.
 silicon dioxide, silicon nitride
Material silicon
Sides processed both
Wafer diameter(s)
List or range of wafer diameters the tool can accept
 100 mm
Wafer holder
Device that holds the wafers during processing.
 teflon cassette
Wafer size
Wafer size
Equipment Sink 1
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm