Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon Dioxide ICP Etch
Process characteristics:
Depth
Depth*
must be 0.01 .. 2 µm
0.01 .. 2 µm
Etch rate 1920 Å/min
Gas CF4
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 5214e: 1, AZ 9245: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment VLR 700 Cluster - Fluorine Dielectric Etch Chamber
Equipment characteristics:
Batch sizes 100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
 1-flat
Wafer holder
Device that holds the wafers during processing.
 cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), sapphire, silicon, silicon on insulator