Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Wafer curvature measurement (thermal expansion & biaxial modulus calculation)
Process characteristics:
Thickness
Film thickness
Thickness*
Film thickness, must be 0.01 .. 500 µm
0.01 .. 500 µm
Batch size 2
Sides inspected
The sides of the wafer inspected by the process
 either
Temperature 40 .. 500 °C
Wafer size
Wafer size
Equipment Tencor FLX-2320
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 aluminum ring, aluminum plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), quartz (single crystal), glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 2000 µm
Comments:
  • Requires film deposition and
    measurements on two different
    substrate materials.
  • Must be preceded in sequence
    by wafer curvature
    measurements
    before thin film deposition.
  • Stress-temperature
    measurement
    range: 40 to 400 degC.