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Gold static DC-magnetron sputter: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Gold static DC-magnetron sputter
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
argon
Batch size
1
Deposition rate
Rate at which material is added to a wafer
1600 Å/min
Material
gold
Microstructure
Zone T to Zone 2
Pressure
Pressure of process chamber during processing
7 mTorr
Sides processed
either
Wafer size
Wafer size
25 .. 49 mm
50 .. 75 mm
100 mm
Equipment
Enerjet
Fixtures exist to support 50mm, 75mm, and 100mm wafers. There is a small edge-exclusion along the entire wafer edge for these fixtures. Up to eight wafers may be sputtered with these fixtures.
Clamping fixtures exist to support irregular substrates from 25mm to 75mm wide. Sputter is blocked where clamping fingers hold sample.
For irregular samples 25mm to near 50mm wide up to 16 samples may be run per batch.
For irregular samples 50mm to 75mm wide only 8 samples can be run per batch.
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
rotating orbital
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 1000 µm
Comments:
This is a high deposition rate process intended for deposition of thicker films. For films 5000A or thinner consider using Gold DC-magnetron sputter (non-static version).
Enerjet sputter tool has a rotating wafer tray which can accomodate up to eight 100mm wafers. Under normal use (non-static processing) the wafer tray dynamically rotates the wafers over the target during sputtering. During static processing the wafers are held stationary above the target. Tool constraints limit the number of available slots to two 100mm wafers during static processing; wafers are processed one at a time.
Fixtures are available to accomodate 50mm or 75mm wafers.
Clamping fixtures are also available to allow processing novel substrate shapes. These can also be used to increase batch size for smaller substrates (up to two substrates per slot). Clamps will block deposition at clamping sites.