|
| Ambient Ambient to which substrate is exposed during processing |
air |
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| Pressure Pressure of process chamber during processing |
1 atm |
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| Sides processed |
both |
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| Temperature |
120 °C |
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| Thermal duration |
20 min |
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| Wafer size |
|
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| Equipment |
Thermal ace hotplate |
| Equipment characteristics: |
| Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
stainless steel |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 500 µm |
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| Comments: |
|
