Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon Nitride ICP Etch
Process characteristics:
Depth
Depth*
must be 0.01 .. 0.5 µm
0.01 .. 0.5 µm
Etch rate 0.19 µm/min
Gas SF6, CF4, He
Material silicon nitride
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment VLR 700 Cluster - Fluorine Dielectric Etch Chamber
Equipment characteristics:
Batch sizes 100 mm: 25
Wafer geometry
Types of wafers this equipment can accept
 1-flat
Wafer holder
Device that holds the wafers during processing.
 cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), sapphire, silicon, silicon on insulator