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Contact I-line photolithography (Shipley 1818 - MJB3): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Contact I-line photolithography (Shipley 1818 - MJB3)
1
Prebake II
2
HMDS Prime
Material
HMDS
on front
3
Photoresist coat (Shipley 1818)
Material
Shipley 1818
4
Softbake I
Material
Shipley 1818
on front
5
Contact front-front alignment (MJB3)
on front
6
I-line exposure (MJB3)
Material
photoresist (category)
7
Photoresist develop (Shipley 1818)
Material
Shipley 1818
8
Hardbake I
Material
photoresist (category)
Process characteristics:
Alignment side
Alignment side
*
back
front
Perform hard bake
Perform hard bake
*
yes
no
Perform prime
Perform prime
*
yes
no
Perform slow bake
Perform slow bake
*
yes
no
Resist thickness
Resist thickness
µm
must be 1 .. 2 µm
1 .. 2 µm
Batch size
4
Magnification
1
Material
Shipley 1818
Sides processed
either
Wafer size
Wafer size
50 mm
75 mm
Comments:
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.