Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  P-type polygermanium LPCVD
  1 Pre-furnace clean (for metallized wafers with DUV photoresist)
  2 Polygermanium nucleation layer LPCVD
Materialpoly-Germanium
  3 P-type polygermanium LPCVD
Materialpoly-GermaniumResidual stress26 MPa
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  4 Sheet resistance measurement
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Wafers have duv photoresist
Wafers have duv photoresist*
yes no
Wafers metallized
Wafers metallized*
yes no
Wafers mos clean
Wafers mos clean*
yes no
Batch sizes 100 mm: 24
Excluded materials gold
Material poly-Germanium
Wafer size
Wafer size
Comments:
  • Wafers with metals or photoresists must be cleaned using "Photoresist removal", they are not allowed in "Piranha cleans".
  • "Piranha Clean II" is not a MOS CLEAN process.