Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact I-line photolithography (AZ 5214 - MJB3) -Image Reversal-
  1 Prebake II
on front
  2 Photoresist coat (AZ 5214)
MaterialAZ 5214
  3 Softbake II
MaterialAZ 5214
on front
  4 Contact front-front alignment (MJB3)
on front
  5 I-line exposure (MJB3)
Materialphotoresist (category)
  6 Post-exposure bake
MaterialAZ 5214
on front
  7 I-line flood exposure (MJB3)
Materialphotoresist (category)
  8 Photoresist developer (AZ 5214)
MaterialAZ 5214
  9 Hardbake I
Materialphotoresist (category)
Process characteristics:
Alignment side
Alignment side*
Perform hard bake
Perform hard bake*
yes no
Perform slow bake
Perform slow bake*
yes no
Resist thickness
Resist thickness
must be 1.1 .. 1.63 µm
1.1 .. 1.63 µm
Batch size 4
Magnification 1
Material AZ 5214
Sides processed either
Wafer size
Wafer size
Comments: