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Contact I-line photolithography (AZ 5214 - MJB3) -Standard-: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Contact I-line photolithography (AZ 5214 - MJB3) -Standard-
1
Prebake II
on front
2
Photoresist coat (AZ 5214)
Material
AZ 5214
3
Softbake II
Material
AZ 5214
on front
4
Contact front-front alignment (MJB3)
on front
5
I-line exposure (MJB3)
Material
photoresist (category)
6
Photoresist developer (AZ 5214)
Material
AZ 5214
7
Hardbake I
Material
photoresist (category)
Process characteristics:
Alignment side
Alignment side
*
back
front
Perform hard bake
Perform hard bake
*
yes
no
Perform slow bake
Perform slow bake
*
yes
no
Resist thickness
Resist thickness
Å
µm
cm
inch
m
mil
mm
nm
must be 1.1 .. 1.63 µm
1.1 .. 1.63 µm
Batch size
4
Magnification
1
Material
AZ 5214
Sides processed
either
Wafer size
Wafer size
50 mm
75 mm
Comments:
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.