Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide PECVD
  1 4:1 Sulfuric/peroxide bath
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  2 Polymer clean-up
Materialpolymer (category)
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  3 Silicon dioxide PECVD
Materialsilicon dioxideRefractive index1.44Residual stress-350 MPa
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  4 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.01 .. 3.25 µm
0.01 .. 3.25 µm
Material silicon dioxide
Wafer size
Wafer size