Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (Image reversal)
  1 Dehydration bake
on front
  2 HMDS prime (manual)
MaterialHMDS
on front
  3 Photoresist coat (manual)
  4 Photoresist softbake (manual)
on front
  5 Contact front-front align & expose
  6 Photoresist hardbake (102 degC)
on front
  7 Contact flat align & expose
on front
  8 Photoresist develop (manual)
Process characteristics:
Resist thickness
Resist thickness*
must be 1.4 .. 2.8 µm
1.4 .. 2.8 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Material AZ 5214
Max field size 100 mm
Min feature size 5 µm
Wafer size
Wafer size
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