Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Deep RIE (Bosch process)
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  1 Deep RIE (Bosch process)
Materialsilicon
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  2 Resist ash
Materialphotoresist (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Perform handle wafer mounting
Select "yes" if the etch will go through the wafer.
Perform handle wafer mounting*
yes no
Select "yes" if the etch will go through the wafer.
Etch rate 1 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size
Comments:
  • This module should be used with a proper masking layer.