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Photoresist coat (Shipley 3612): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Photoresist coat (Shipley 3612)
1
Dehydration bake
on front
2
100% HMDS prime
Material
HMDS
on front
3
Photoresist coat (Shipley 3612)
Material
Shipley 3612
4
Soft bake
5
Hard bake
Process characteristics:
Resist thickness
Thickness of material to be deposited.
Resist thickness
*
1.0 um
1.6 um
Thickness of material to be deposited.
Material
Shipley 3612
Wafer size
Wafer size
100 mm
Comments:
The film is hardbaked at 110 C for 25 min.