Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Deep boron diffusion
  1 Piranha clean
  2 Pre-furnace clean
  2.1 RCA clean
  2.2 HF dip
  3 Boron pre-deposition
Materialboron
  4 HF etch
Materialsilicon dioxide
Process characteristics:
Concentration
Concentration*
must be 0 .. 4e+20 atom/cc
0 .. 4e+20 atom/cc
Diffusion depth
Diffusion depth*
must be 0 .. 15 µm
0 .. 15 µm
Wafer size
Wafer size