on front Silicon dioxide PECVD |
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| Process characteristics: |
| Temperature |
|
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| Thickness 0.2 .. 8.0 micron |
|
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| Ambient Ambient to which substrate is exposed during processing |
helium, nitrogen, nitrous oxide, silane |
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| Deposition rate Rate at which material is added to a wafer |
909 Å/min |
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| Material |
silicon dioxide |
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| Pressure Pressure of process chamber during processing |
0.9 Torr |
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| Residual stress |
-165 MPa |
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| Sides processed |
either |
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| Wafer size |
|
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| Equipment |
Unaxis SLR730 |
| Equipment characteristics: |
| Batch sizes |
100 mm: 3, 125 mm: 3, 50 mm: 3, 75 mm: 3 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, Borofloat (Schott), ceramic, Corning 1737, fused silica, glass-ceramic, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator, silicon on sapphire, titanium |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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| Comments: |
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