|
| Process characteristics: |
| Number of bond wires Number of wires to be bonded. |
|
|---|
| Batch size |
1 |
|---|
| Die dimension Characteristic dimension of dies (e.g., side length of square) the equipment can accept |
50 .. 100000 µm |
|---|
| Min bond pad size Minimum characteristic dimension of bond pad. |
50 µm |
|---|
| Min bond pad spacing Minimum spacing between bond pads. |
50 µm |
|---|
| Wire material Wire material |
aluminum |
|---|
| Equipment |
Orthodyne aluminum wirebonder
|
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Piece dimension Range of wafer piece dimensions the equipment can accept |
10 .. 100 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
circular, irregular, other, rectangular, triangular shard |
|---|
| Piece thickness Range of wafer piece thickness the equipment can accept |
200 .. 1000 µm |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, polyethylene, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator |
|---|
