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| Process characteristics: |
| Cuts per wafer Number of cuts per wafer |
|
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| Alignment type Method used to align materials to be bonded. |
optical |
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| Blade thickness Thickness of cutting blade for wafer dicing. |
250 µm |
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| Die dimension Characteristic dimension of dies (e.g., side length of square) the equipment can accept |
50 .. 100000 µm |
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| Die separation (X-direction) Die separation on wafer in X. |
50 .. 100000 µm |
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| Die separation (Y-direction) Die separation on wafers in Y. |
50 .. 100000 µm |
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| Die width Width of die. |
50 .. 100000 µm |
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| Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
line |
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| Wafer size |
|
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| Equipment |
MicroAutomation dicing saw |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 125 mm: 1, 50 mm: 1, 75 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
stainless steel |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, polyethylene, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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| Comments: |
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