| |   Contact flat  alignment and exposure | 
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        | Alignment tolerance Registration of CAD data to features on wafer | 2 µm | 
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            | Feature geometry Shape of feature with dimensions characterized by the minimum feature size | line | 
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            | Field geometry Shape of field with dimensions characterized by the maximum field size | circle | 
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            | Intensity Intensity of light source | 20 mW/cm/cm | 
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            | Magnification | 1 | 
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            | Sides processed | both | 
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            | Wavelength Wavelength of light used during the exposure | 365 .. 436 nm | 
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            | Wafer size |  | 
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            | Equipment | Karl Suss MA6 Contact Aligner | 
            
            
              | Equipment characteristics: | 
            | Batch sizes | 100 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1 | 
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            | Piece geometry Geometry of wafer pieces the equipment can accept | circular, rectangular | 
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            | Wafer geometry Types of wafers this equipment can accept | 1-flat, 2-flat | 
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            | Wafer holder Device that holds the wafers during processing. | metal chuck | 
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            | Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). | gallium arsenide, indium phosphide, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon on insulator | 
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            | Wafer thickness List or range of wafer thicknesses the tool can accept | 200 .. 800 µm | 
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              | Comments: | 
            
        
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