Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Advanced silicon dioxide etch (AOE) with photolithography
on front
  1 Contact photolithography (Automated)
  1.1 HMDS Vapor Prime
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  1.2 Photoresist Spin Coat ACS200 (AZ 9245)
  1.3 Photoresist Softbake ACS200
  1.4 Edge bead removal
  1.5 Contact flat alignment and exposure
  1.6 Photoresist Develop (AZ 9245)
  1.7 Linewidth Microscope Measurement
on front
  2 Advanced oxide etch
Process characteristics:
Alignment tolerance
Registration of CAD data to features on wafer
Alignment tolerance*
Registration of CAD data to features on wafer
unconstrained
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.5 .. 30 µm
0.5 .. 30 µm
Material
Material*
Min feature size
Min feature size*
unconstrained
Perform edge bead removal
Perform edge bead removal*
yes no
Perform microscope inspection
Perform microscope inspection*
yes no
Perform sem sample analysis
Perform sem sample analysis*
yes no
Perform stylus profilometry
Perform stylus profilometry*
yes no
Resist thickness
Resist thickness*
Aspect ratio 15
Etch rate 0.1 .. 0.5 µm/min
Mask materials
Materials that can be used to mask etching.
 AZ 9245, AZ 5214e
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 2, silicon dioxide: 1
Wafer size
Wafer size
Comments:
  • Please contact for >10um thick photoresists.
  • If optional inspections processes are added, all processed wafers will be inspected.
Attachments
[Thumbnail]10um resist 10um etch.JPG (50.6 KB, image/jpeg)
attached by ozgur (Mehmet Ozgur) on 2004-02-25 16:14
10um deep etch.