on front Stylus profilometer 1-D step measurement |
|
| Contact force Force applied at contact point |
5 mN |
|---|
| Depth |
0 .. 1000 µm |
|---|
| Feature geometry Shape of feature with dimensions characterized by the minimum feature size |
step |
|---|
| Max field size |
20 mm |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
Dektak surface profilometer |
| Equipment characteristics: |
| Batch sizes |
2 .. 150 mm: 1 |
|---|
| Die area Die area the equipment can accept |
5 .. 10000 cm2 |
|---|
| Die holder Device that holds the die(s) during processing |
metal chuck |
|---|
| Die materials List of allowed materials for dies accepted by this equipment |
alumina |
|---|
| Die thickness List or range of die thicknesses the tool can accept |
150 mm |
|---|
| MOS clean |
no |
|---|
| Piece dimension Range of wafer piece dimensions the equipment can accept |
300 .. 2000 mm |
|---|
| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, other, rectangular, irregular, circular |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, quartz (fused silica), silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 2000 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
