|
| Process characteristics: |
| Thickness Thickness of grown film. |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
oxygen, hydrogen |
|---|
| Material |
silicon dioxide |
|---|
| Pressure Pressure of process chamber during processing |
1 atm |
|---|
| Refractive index |
1.45 |
|---|
| Sides processed |
both |
|---|
| Temperature |
950 °C |
|---|
| Uniformity |
-0.07 .. 0.07 |
|---|
| Wafer size |
|
|---|
| Equipment |
Furnace : Oxide |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 900 µm |
|---|
