Super Low-Stress LPCVD Silicon Nitride |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
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| Allowed materials |
polysilicon on silicon dioxide, silicon germanium, silicon (single crystal), silicon nitride on silicon, silicon dioxide (low temperature), silicon oxy-nitride, silicon nitride, silicon on insulator, silicon dioxide, silicon, silicon dioxide on silicon, silicon on sapphire, silicon carbide, polysilicon, quartz (single crystal), silicon nitride on quartz, silicon/glass composite, silicon (doped), polysilicon on quartz, silicon dioxide (category), quartz (fused silica), silicon nitride on silicon dioxide |
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| Ambient Ambient to which substrate is exposed during processing |
dichlorosilane, ammonia |
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| Material |
silicon nitride |
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| Refractive index |
2.3 |
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| Residual stress |
0 .. 100 MPa |
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| Sides processed |
both |
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| Temperature |
820 °C |
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| Uniformity |
-0.075 .. 0.075 |
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| Wafer size |
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| Equipment |
Furnace : Nitride |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
274 .. 700 µm |
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