Stoichiometric silicon nitride LPCVD |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
|
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| Deposition rate Rate at which material is added to a wafer |
0.0035 µm/min |
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| Material |
silicon nitride |
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| Residual stress |
800 MPa |
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| Sides processed |
both |
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| Temperature |
800 °C |
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| Uniformity |
-0.07 .. 0.07 |
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| Wafer size |
|
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| Equipment |
Furnace : Nitride |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
274 .. 700 µm |
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