|
| Process characteristics: |
| Thickness Thickness of grown film. |
|
|---|
| Allowed materials |
silicon, silicon nitride, polysilicon, silicon dioxide |
|---|
| Ambient Ambient to which substrate is exposed during processing |
oxygen, hydrogen |
|---|
| Growth rate Rate at which film grows (linear approximation) |
40 .. 100 Å/min |
|---|
| Material |
silicon dioxide |
|---|
| Refractive index |
1.46 |
|---|
| Sides processed |
both |
|---|
| Temperature |
1000 .. 1100 °C |
|---|
| Uniformity |
0.03 |
|---|
| Wafer size |
|
|---|
| Equipment |
FNA2 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
|---|
| MOS clean |
yes |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
