Low Stress silicon nitride LPCVD (300 MPa) |
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| Process characteristics: |
| Thickness Thickness of material to be deposited. |
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| Allowed materials |
silicon, silicon nitride, polysilicon, silicon dioxide |
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| Ambient Ambient to which substrate is exposed during processing |
dichlorosilane, ammonia |
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| Deposition rate Rate at which material is added to a wafer |
31 Å/min |
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| Material |
silicon nitride |
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| Pressure Pressure of process chamber during processing |
200 mTorr |
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| Refractive index |
2.2 |
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| Residual stress |
200 .. 300 MPa |
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| Sides processed |
both |
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| Temperature |
810 °C |
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| Uniformity |
0.05 |
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| Wafer size |
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| Equipment |
FNB2 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
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| MOS clean |
yes |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
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