Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low Stress silicon nitride LPCVD (300 MPa)
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.05 .. 2 µm
0.05 .. 2 µm
Allowed materials silicon, silicon nitride, polysilicon, silicon dioxide
Ambient
Ambient to which substrate is exposed during processing
 dichlorosilane, ammonia
Deposition rate
Rate at which material is added to a wafer
 31 Å/min
Material silicon nitride
Pressure
Pressure of process chamber during processing
 200 mTorr
Refractive index 2.2
Residual stress 200 .. 300 MPa
Sides processed both
Temperature 810 °C
Uniformity 0.05
Wafer size
Wafer size
Equipment FNB2
Equipment characteristics:
Batch sizes 150 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 675 µm