on front Silicon DRIE (Bosch Process) |
|
| Process characteristics: |
| Depth |
|
|---|
| Aspect ratio |
15 |
|---|
| Etch rate |
4 µm/min |
|---|
| Gas |
SF6, C4F8, Argon, O2, He |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
AZ 5214: 75, silicon dioxide: 150, silicon: 1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
25 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
STS ASE DRIE |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
helium clamp |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
250 .. 1000 µm |
|---|
