Silicon dioxide RIE (Plasmalab) |
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| Process characteristics: |
| Depth |
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| Ambient Ambient to which substrate is exposed during processing |
trifluoromethane, O2, CF4 |
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| Etch type |
dry anisotropic |
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| Material |
silicon dioxide |
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| Wafer size |
|
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| Equipment |
Plasmalab MicroEtch |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1, 200 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon carbide, silicon, gallium arsenide |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
0 .. 1000 µm |
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