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About MEMS
E-beam evaporation: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
E-beam evaporation
Process characteristics:
Adhesion layer material
In necessary please specify the adhesion material.
Adhesion layer material
chromium
titanium
In necessary please specify the adhesion material.
Adhesion layer thickness
thickness of adhesion layer
Adhesion layer thickness
Å
thickness of adhesion layer, must be 0 .. 300 Å
0 .. 300 Å
Material
Choose the main metal for evaporation.
Material
*
aluminum
chromium
gold
platinum
titanium
Choose the main metal for evaporation.
Thickness
Allowed thickness ranges for main materials are as follows:
Al < 1um
Ti < 0.15um
Cr < 0.1um
Pt < 0.1um
Thickness
*
µm
nm
Allowed thickness ranges for main materials are as follows: Al < 1um Ti < 0.15um Cr < 0.1um Pt < 0.1um, must be 0 .. 1 µm
0 .. 1 µm
Ambient
Ambient to which substrate is exposed during processing
nitrogen
Batch size
8
Sides processed
either
Wafer size
Wafer size
50 mm
75 mm
100 mm
Equipment
Enerjet E-beam
Hemispherical dome for lift-off
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
rotating orbital
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, glass (category), indium phosphide, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 1000 µm