Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (automated)
on front
  1 Photoresist coat (automated)
  2 Photoresist softbake (automated)
on front
  3 Contact front-front align & expose
on front
  4 Photoresist develop (automated)
  5 Photoresist hardbake (hotplate @105C)
Process characteristics:
Alignment type
Method of mask alignment for the exposure
Alignment type*
Method of mask alignment for the exposure
Material
Material*
Perform hard bake
Perform hard bake*
yes no
Perform prime
Perform prime*
yes no
Resist thickness
Please you the following ranges:
AZ 5214: 1.4 .. 2.8um
AZ 9260: 6 .. 20um
Shipley 1813: 1.3um
Shipley 1827: 2.7um
Shipley 220: 1.5 .. 4.5 um
Resist thickness*
Please you the following ranges: AZ 5214: 1.4 .. 2.8um AZ 9260: 6 .. 20um Shipley 1813: 1.3um Shipley 1827: 2.7um Shipley 220: 1.5 .. 4.5 um , must be 1.3 .. 20 µm
1.3 .. 20 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Max field size 100 mm
Min feature size 5 µm
Wafer size
Wafer size